Characterization of Group III-nitride semiconductors by high-resolution electron microscopy
- 1 July 1995
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 152 (3) , 135-142
- https://doi.org/10.1016/0022-0248(95)00041-0
Abstract
No abstract availableThis publication has 11 references indexed in Scilit:
- Initial stage of aluminum nitride film growth on 6H-silicon carbide by plasma-assisted, gas-source molecular beam epitaxyApplied Physics Letters, 1995
- Structural properties of InN films grown on GaAs substrates: observation of the zincblende polytpeJournal of Crystal Growth, 1993
- GaN, AlN, and InN: A reviewJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1992
- High-Power GaN P-N Junction Blue-Light-Emitting DiodesJapanese Journal of Applied Physics, 1991
- Epitaxial growth of zinc blende and wurtzitic gallium nitride thin films on (001) siliconApplied Physics Letters, 1991
- An investigation of the properties of cubic GaN grown on GaAs by plasma-assisted molecular-beam epitaxyJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1991
- Critical evaluation of the status of the areas for future research regarding the wide band gap semiconductors diamond, gallium nitride and silicon carbideMaterials Science and Engineering: B, 1988
- Time-resolved spectroscopy of Zn- and Cd-doped GaNJournal of Applied Physics, 1987
- Improvements on the electrical and luminescent properties of reactive molecular beam epitaxially grown GaN films by using AlN-coated sapphire substratesApplied Physics Letters, 1983
- Hot electron microwave conductivity of wide bandgap semiconductorsSolid-State Electronics, 1976