Recent progress in self-assembled quantum-dot optical devices for optical telecommunication: temperature-insensitive 10 Gb s−1directly modulated lasers and 40 Gb s−1signal-regenerative amplifiers
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- 17 June 2005
- journal article
- Published by IOP Publishing in Journal of Physics D: Applied Physics
- Vol. 38 (13) , 2126-2134
- https://doi.org/10.1088/0022-3727/38/13/008
Abstract
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This publication has 33 references indexed in Scilit:
- Photon lifetime dependence of modulation efficiency and K factor in 1.3μm self-assembled InAs∕GaAs quantum-dot lasers: Impact of capture time and maximum modal gain on modulation bandwidthApplied Physics Letters, 2004
- Modulation characteristics of quantum-dot lasers: the influence of p-type doping and the electronic density of states on obtaining high speedIEEE Journal of Quantum Electronics, 2002
- Quantum-dot semiconductor optical amplifiers for high-bit-rate signal processing up to 160 Gb s-1and a new scheme of 3R regeneratorsMeasurement Science and Technology, 2002
- Indoor 2 GHz polarisation and spatial fading characteristicsElectronics Letters, 2002
- Quantum-Dot Semiconductor Optical Amplifiers for High Bit-Rate Signal Processing over 40 Gbit/sJapanese Journal of Applied Physics, 2001
- Optimization of signal transmission by an in-line semiconductor optical amplifier–saturable absorber moduleOptics Communications, 2001
- 40 Gbit/s all-optical data regeneration and demultiplexingwith long pattern lengths using a semiconductor nonlinear interferometerElectronics Letters, 1998
- 1.3 μm room-temperature GaAs-based quantum-dot laserApplied Physics Letters, 1998
- 40 Gbit/s all-optical wavelength converter and RZ-to-NRZformat adapter realised by monolithic integrated active Michelson interferometerElectronics Letters, 1997
- Relationship between self-organization and size of InAs islands on InP(001) grown by gas-source molecular beam epitaxyApplied Physics Letters, 1995