Radiation damage assessment of Nb tunnel junction devices
- 1 December 1991
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 38 (6) , 1359-1364
- https://doi.org/10.1109/23.124117
Abstract
No abstract availableThis publication has 12 references indexed in Scilit:
- Proton-induced displacement damage fluctuations in silicon microvolumesNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1991
- Fabrication of an all-refractory circuit using lift-off with image-reversal photoresistIEEE Transactions on Magnetics, 1991
- Digital applications of superconducting niobium filmsThin Solid Films, 1990
- Josephson shift register design and layoutIEEE Transactions on Magnetics, 1989
- Radiation Damage in Nb/Nb Oxide/PbAuIn Josephson Tunnel Junctions due to Ion ImplantationDefect and Diffusion Forum, 1988
- THE STOPPING AND RANGE OF IONS IN SOLIDSPublished by Elsevier ,1984
- Electron irradiation effects in lead-alloy Josephson junctionsApplied Physics Letters, 1982
- Niobium oxide-barrier tunnel junctionIEEE Transactions on Electron Devices, 1980
- Tunnel spectroscopy on neutron irradiated PbSolid State Communications, 1977
- Color Centers in Simple OxidesPublished by Springer Nature ,1972