In Situ Observation of Electromigration in Cu Film Using Scanning µ-Reflection High-Energy Electron Diffraction Microscope
- 1 December 1991
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 30 (12S) , 3642
- https://doi.org/10.1143/jjap.30.3642
Abstract
We have observed void and hillock formation at the grain boundary and inside the grain in the Cu line due to electromigration (EM), by means of in situ nondestructive imaging of micrograins using a scanning µ-reflection high-energy electron diffraction (µ-RHEED) microscope. Accelerated electromigration testing was performed at a dc current density of 5×106 A/cm2 and at 250°C in the scanning µ-RHEED microscope. The triple point of grain boundaries was confirmed to weaken the EM endurance. Furthermore, we conjectured that high EM endurance inside the grain could be achieved with the current flow along the direction for fcc metal such as Cu.Keywords
This publication has 2 references indexed in Scilit:
- Formation of Copper Thin Films by a Low Kinetic Energy Particle ProcessJournal of the Electrochemical Society, 1991
- Single Crystallization of Aluminum on SiO2 by Thermal Annealing and Observation with Scanning µ-RHEED MicroscopeJapanese Journal of Applied Physics, 1991