Single Crystallization of Aluminum on SiO2 by Thermal Annealing and Observation with Scanning µ-RHEED Microscope
- 1 January 1991
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 30 (1A) , L56
- https://doi.org/10.1143/jjap.30.l56
Abstract
We have found single crystallization of Al on patterned SiO2 by thermal annealing. Via-holes on the Si wafer were completely planarized by selective and nonselective chemical vapor deposition of Al using dimethylaluminum hydride and hydrogen. Single crystallization of Al on patterned SiO2 was observed with a scanning µ-RHEED microscope. Polycrystal (100) Al film on patterned SiO2 was changed into single-crystal (111) Al after the annealing at 645°C.Keywords
This publication has 3 references indexed in Scilit:
- Complete planarization of via holes with aluminum by selective and nonselective chemical vapor depositionApplied Physics Letters, 1990
- Selective deposition of aluminum from selectively excited metalorganic source by the rf plasmaApplied Physics Letters, 1990
- Constitution of Binary AlloysJournal of the Electrochemical Society, 1958