Selective deposition of aluminum from selectively excited metalorganic source by the rf plasma
- 16 April 1990
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 56 (16) , 1543-1545
- https://doi.org/10.1063/1.103169
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Aluminum selective area deposition on Si using diethylaluminumchlorideApplied Physics Letters, 1989
- Epitaxial Growth of Al on Si by Gas-Temperature-Controlled Chemical Vapor DepositionJapanese Journal of Applied Physics, 1988
- Chemical Vapor Deposition of Aluminum Enhanced by Magnetron‐PlasmaJournal of the Electrochemical Society, 1988
- Characterization of LPCVD Aluminum for VLSI ProcessingJournal of the Electrochemical Society, 1984