Epitaxial Growth of Al on Si by Gas-Temperature-Controlled Chemical Vapor Deposition
- 1 September 1988
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 27 (9A) , L1775-1777
- https://doi.org/10.1143/jjap.27.l1775
Abstract
Epitaxial Al(111) film was deposited on Si(111) by low-pressure chemical vapor deposition with the use of tri-isobutyl aluminum (TIBA) at the substrate temperature of 400°C with the deposition rete of 0.9 µm/min. It was necessary for epitaxy to preheat the TIBA gas just before the deposition on the substrate (gas-temperature controlling). The film surface was very smooth; reflectance was higher than 90%. Streaks were observed in RHEED patterns. The rocking curve measured by X-ray diffraction was very narrow. Analysis by SIMS showed the film contained about 0.1% of Si and 20 ppm of O, C, and H. No hillock appeared on the film after 430°C annealing for 40 min.Keywords
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