Damage Removal and Activation in Rapid-Thermally-Annealed Silicon Implanted Semi-Insulating GaAs
- 1 January 1988
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
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- Nonlinear strain effects in ion-implanted GaAsJournal of Applied Physics, 1987
- Strain in GaAs by low-dose ion implantationJournal of Applied Physics, 1987
- Rapid annealing of GaAs: Uniformity and temperature dependence of activationJournal of Applied Physics, 1986
- Double-implanted GaAs complementary JFET'sIEEE Electron Device Letters, 1984