C-band side-entry Ge quantum-well electroabsorption modulator on SOI operating at 1 V swing

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Abstract
An electroabsorption modulator using a side-entry architecture achieved a contrast ratio exceeding 3 dB over a 3.5 nm range in the C-band, using a voltage swing of 1 V and operating at 100°C. Modulation was due to the quantum-confined Stark effect from ten Ge/SiGe quantum wells epitaxially grown on silicon-on-insulator (SOI) wafers. The device exploits an asymmetric Fabry-Perot resonator formed between the totally internally reflecting air-SiGe interface and a frustrated total internal reflection from the buried oxide layer of the SOI substrate.

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