Evaluation of electron-phonon coupling of Al0.27Ga0.73As/GaAs quantum wells by normal incidence reflectance
- 31 August 1991
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 79 (7) , 561-565
- https://doi.org/10.1016/0038-1098(91)90910-n
Abstract
No abstract availableKeywords
This publication has 13 references indexed in Scilit:
- Debye-Waller factor determination in GaxAl1−xAs superlatticeSolid State Communications, 1991
- Phonons in GaAs-AlxGa1−xAs superlatticesJournal of Luminescence, 1989
- Optical properties of short-period GaAs/AlGaAs superlatticesJournal of Luminescence, 1989
- Electron-Phonon Interaction in Optical Absorption at the Si(111)2 × 1 SurfacePhysical Review Letters, 1986
- Binding energy of the screened exciton in two-dimensional systemsJournal of Applied Physics, 1985
- Room temperature excitonic nonlinear absorption and refraction in GaAs/AlGaAs multiple quantum well structuresIEEE Journal of Quantum Electronics, 1984
- Polaron effective mass in GaAs heterostructurePhysical Review B, 1983
- Infrared reflectivity spectra and Raman spectra of Ga1−xAlxAs mixed crystalsJournal of Applied Physics, 1979
- Theory of the temperature dependence of electronic band structuresJournal of Physics C: Solid State Physics, 1976
- Superlattice and Negative Differential Conductivity in SemiconductorsIBM Journal of Research and Development, 1970