Current-Induced Degradation of AlGaAs/GaAs Heterojunction Bipolar Transistors and Its Suppression by Thermal Annealing in As Overpressure
- 1 August 1992
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 31 (8R)
- https://doi.org/10.1143/jjap.31.2343
Abstract
Current-induced degradation of current-voltage (I-V) characteristics in AlGaAs/GaAs heterojunction bipolar transistors (HBTs) with Be-doped base layers is investigated. Large shifts of emitter-base on-voltage (ΔV BE) are observed during high current operation. The behavior of degradation is qualitatively explained in terms of interstitial Be diffusion in combination with the electron-hole recombination process. Thermal annealing in As overpressure can successfully stabilize the characteristics. Degradation is not observed in AlGaAs/GaAs HBTs with C-doped base layers without the Zn diffusion process.Keywords
This publication has 2 references indexed in Scilit:
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- Anomalous redistribution of beryllium in GaAs grown by molecular beam epitaxyJournal of Applied Physics, 1985