Reduction of interface hydrogen content by partially ionized beam deposition technique
- 6 June 1988
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 52 (23) , 1962-1964
- https://doi.org/10.1063/1.99590
Abstract
Hydrogen content at the Al/Si interface of samples with Al films deposited by conventional means and by a partially ionized beam (PIB) was measured using 1H(15N,αγ)12C nuclear resonance reaction. We observed that samples with PIB‐deposited Al film exhibited significantly lower hydrogen concentration at the Al/Si in interface than that of the sample deposited by conventional means. The results demonstrated the ability of the PIB technique to perform interface self‐cleaning, at least for hydrogen contaminant.Keywords
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