A Super Thin Film Transistor in Advanced Poly Si Films
- 1 April 1986
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 25 (4A) , L291
- https://doi.org/10.1143/jjap.25.l291
Abstract
A super thin film transistor (SFT), the active layer poly Si of which is 150–200 Å thick, is advanced by Si+ implantation and solid phase growth. Poly Si films were amorphized by Si+ implantation, and then regrown by annealing at 600°C in N2 atmosphere for 15 hrs. The maximum grain size increases to 1 µm and electrical properties are advanced. SFT's were fabricated using this technique, and the Si- dose and acceleration energy dependence of field effect mobility µFE were evaluated. µFE of more than 100 cm2/V·s is obtained at 40 keV and above 2×1015/cm2 Si+ dose in 800 Å thick films before oxidation.Keywords
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