Stochastic model for grain size versus dose in implanted and annealed polycrystalline silicon films on SiO2
- 15 June 1985
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 57 (12) , 5169-5175
- https://doi.org/10.1063/1.335251
Abstract
160-nm polycrystalline silicon films were implanted at room temperature with 100-keV silicon ions and subsequently annealed. The final grain size was found to increase with implant dose. A model is presented here to account for the dose dependence of the grain size. Three mechanisms were presumed to account for the final grain size: statistical variations of area coverage by the implanted ions, ion channeling, and spontaneous nucleation. Model parameters were successfully fit to the experimental data.This publication has 7 references indexed in Scilit:
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