Bound-state-induced scattering resonances at dislocations
- 1 July 1978
- journal article
- Published by IOP Publishing in Journal of Physics F: Metal Physics
- Vol. 8 (7) , 1467-1476
- https://doi.org/10.1088/0305-4608/8/7/019
Abstract
The nature of electronic bound states on dislocations in crystals is discussed and it is argued that the existence of scattering resonances very close to the Fermi energy may be understood as a many-body effect arising from the screening of bound charges on dislocation lines. The effect of this bound charge upon de Haas-van Alphen frequencies is considered.Keywords
This publication has 34 references indexed in Scilit:
- Scattering theory for crystal dislocationsJournal of Physics F: Metal Physics, 1977
- Electrical resistivity of dislocations in metalsJournal of Physics F: Metal Physics, 1977
- Dislocation electrical resistivity and resonance scatteringJournal of Physics F: Metal Physics, 1977
- The electron states associated with the core region of the 60° dislocation in siliconPhysica Status Solidi (b), 1977
- Phonon Scattering by Line DefectsPhysical Review B, 1971
- Resonance Scattering and the Electrical and Thermal Resistivities Associated with Extended Defects in CrystalsPhysical Review B, 1967
- Electron and Phonon Bound States and Scattering Resonances for Extended Defects in CrystalsPhysical Review B, 1967
- Influence of Impurities on the de Haas-van Alphen EffectPhysical Review B, 1966
- The electrical resistivity of dislocationsPhilosophical Magazine, 1963
- Residual Resistivity of Copper and Silver Alloys: Dependence on Periodic TablePhysical Review B, 1957