Magnetotransport in narrow In0.53Ga0.47As/InP wires
- 22 October 1990
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 57 (17) , 1757-1759
- https://doi.org/10.1063/1.104058
Abstract
We have fabricated dry etched In0.53Ga0.47As quantum wires with geometrical widths varying from 80 nm to 50 μm from modulation‐doped heterostructures. All wires show finite resistances even at 40 mK without illumination. The magnetotransport measurements show clearly the depopulation of one‐dimensional subbands, universal conductance fluctuations, and an anomalous magnetoresistance peak.Keywords
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