Heteroepitaxial growth of SiC polytypes
- 1 July 1987
- journal article
- letter
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 62 (1) , 303-305
- https://doi.org/10.1063/1.339147
Abstract
Heteroepitaxial growth of SiC polytypes, 3C- and 6H-SiC, has been studied by chemical vapor deposition. Raman spectra were used to identify the polytypes. 3C-SiC and 6H-SiC were grown on 6H-SiC at low (1330–1500 °C) and high temperatures (1700–1800 °C), respectively. On the other hand, on 3C-SiC, only 3C-SiC was grown at all the temperatures. 3C-SiC epilayers grown at high temperatures have smooth surfaces and good electrical properties compared with those grown at low temperatures.This publication has 8 references indexed in Scilit:
- Raman scattering of SiC: Application to the identification of heteroepitaxy of SiC polytypesJournal of Applied Physics, 1987
- Temperature dependence of electrical properties of n- and p-type 3C-SiCJournal of Applied Physics, 1987
- Epitaxial growth of β-SiC thin films on 6H α-SiC substrates via chemical vapor depositionApplied Physics Letters, 1986
- Schottky-barrier field-effect transistors of 3C-SiCJournal of Applied Physics, 1986
- Epitaxial growth of β-SiC single crystals by successive two-step CVDJournal of Crystal Growth, 1984
- A new doping method using metalorganics in chemical vapor deposition of 6H–SiCJournal of Applied Physics, 1984
- Production of large-area single-crystal wafers of cubic SiC for semiconductor devicesApplied Physics Letters, 1983
- Solution grown SiC p-n junctionsJournal of Physics D: Applied Physics, 1969