Schottky-barrier field-effect transistors of 3C-SiC
- 15 October 1986
- journal article
- letter
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 60 (8) , 2989-2991
- https://doi.org/10.1063/1.337751
Abstract
Schottky‐barrier field‐effect transistors have been fabricated first from 3C‐type SiC. Al‐doped p‐type and nondoped n‐type 3C‐SiC epilayers were successively grown on p‐type Si substrates by chemical vapor deposition. Au and Al electrodes were used for Schottky‐barrier gate contacts and ohmic (source and drain) contacts for n‐type SiC. Transistor operation was observed for the first time for the field‐effect transistors of 3C‐SiC.This publication has 7 references indexed in Scilit:
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