In Situ Observation of Monolayer Steps during Molecular Beam Epitaxy of Gallium Arsenide by Scanning Electron Microscopy
- 1 April 1994
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 33 (4B) , L563
- https://doi.org/10.1143/jjap.33.l563
Abstract
We have applied scanning electron microscopy (SEM) for in situ observation of molecular beam epitaxy (MBE) of GaAs. Monolayer steps on a GaAs (001) surface are imaged by secondary electrons during MBE growth. The step structure change is observed between the step-bunched surface during growth interruption and the monolayer-stepped surface during growth.Keywords
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