In-situ observation of roughening process of MBE GaAs surface by scanning reflection electron microscopy
- 1 January 1990
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 99 (1-4) , 120-123
- https://doi.org/10.1016/0022-0248(90)90496-8
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- I n s i t u observation of molecular beam epitaxy of GaAs and AlGaAs under deficient As4 flux by scanning reflection electron microscopyApplied Physics Letters, 1989
- Migration-Enhanced Epitaxy of GaAs and AlGaAsJapanese Journal of Applied Physics, 1988
- RHEED intensity oscillation during growth of AlAs and GaAs in incorporating As.Hyomen Kagaku, 1987
- Low-Temperature Growth of GaAs and AlAs-GaAs Quantum-Well Layers by Modified Molecular Beam EpitaxyJapanese Journal of Applied Physics, 1986
- Arsenic-induced intensity oscillations in reflection high-energy electron diffraction measurementsJournal of Vacuum Science & Technology B, 1986
- Morphology of GaAs and AlxGa1−xAs grown by molecular beam epitaxyJournal of Vacuum Science & Technology B, 1985
- Dynamic RHEED observations of the MBE growth of GaAsApplied Physics A, 1984
- Dynamics of film growth of GaAs by MBE from Rheed observationsApplied Physics A, 1983