Driven reconstruction of dislocation cores in semiconductors
- 1 July 1988
- journal article
- research article
- Published by Taylor & Francis in Philosophical Magazine Letters
- Vol. 58 (1) , 1-5
- https://doi.org/10.1080/09500838808214722
Abstract
The conditions necessary for driving the reconstruction of a dislocation core by means of helium atoms diffusing along a dislocation pipe are examined. It is shown by a simple model that, unlike in Ge, in which such reconstruction has been achieved, the chances of driving such a reconstruction in Si by helium are rather small. Some hopes may be focused on hydrogen, which is known to diffuse effectively into deformed Si.Keywords
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