Influence of Gallium Sources on Impurity Doping in Gas Source MBE GaAs

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Abstract
The difference of gallium sources, elemental gallium (Ga) and triethylgallium (TEG) on impurity doping in GaAs grown by gas source MBE using AsH3 gas has been studied. Unintentionally doped GaAs epilayers show p- and n-type conductivities, respectively, with and without a Liq.N2 trap in oil diffusion pump evacuation system when TEG was used as a gallium source. On the other hand, all the GaAs epilayers grown using Ga show p-type conductivity. Si doping efficiency by use of SiH4 gas for the growth using TEG is about 6-times higher than that for growth using Ga. The differences of impurity doping in gas source MBE using TEG and Ga are discussed based on the results of photoluminescence and secondary ion mass spectroscopic measurements.