Use of a Pinch Resistor for Neutron Hardness Assurance Screening of Bipolar Integrated Circuits
- 1 January 1981
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 28 (6) , 4318-4321
- https://doi.org/10.1109/tns.1981.4335721
Abstract
It is shown that a pinch resistor can be used to predict the neutron induced gain degradation of a related bipolar transistor. The experimental data indicate that the prediction accuracy can be at least as good as that obtained using the VBE(ON) measurement with a breakout transistor. Thus, the pinch resistor provides a simple DC test element which can be very effective in implementing a 100% electrical screening technique for the neutron hardness assurance of bipolar integrated circuits.Keywords
This publication has 4 references indexed in Scilit:
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- Radiation and Annealing Characteristics of Neutron Bombarded Silicon TransistorsIEEE Transactions on Nuclear Science, 1968
- A Study of the Neutron-Induced Base Current Component in Silicon TransistorsIEEE Transactions on Nuclear Science, 1965