Impact of k-space transfer and band nonparabolicity on electron transport in a GaAs ballistic diode
- 1 March 1992
- journal article
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 7 (3B) , B354-B356
- https://doi.org/10.1088/0268-1242/7/3b/091
Abstract
The results of studying a submicron GaAs ballistic diode, using a new multi-valley ( Gamma ,L and X) nonparabolic hydrodynamic transport model, are presented. Numerical simulations indicate that accurately including the effects of nonparabolicity in the streaming terms and k-space transfer in the velocity and energy equations is very important in correctly determining the conductance of the device. The existence and amount of negative differential conductance was determined to be strongly influenced by both of these physical factors. Furthermore, the sensitivity of device conductance to changes in the thermal conductivity is diminished significantly when nonparabolicity is accurately incorporated.Keywords
This publication has 5 references indexed in Scilit:
- Hydrodynamic hot-electron transport simulation based on the Monte Carlo methodSolid-State Electronics, 1989
- An assessment of approximate nonstationary charge transport models used for GaAs device modelingIEEE Transactions on Electron Devices, 1989
- Electron transport in AlGaAs/GaAs tunneling hot electron transfer amplifiersJournal of Applied Physics, 1988
- Hydrodynamic hot-electron transport model with Monte Carlo-generated transport parametersSolid-State Electronics, 1988
- Transport equations for electrons in two-valley semiconductorsIEEE Transactions on Electron Devices, 1970