Hydrodynamic hot-electron transport simulation based on the Monte Carlo method
- 1 December 1989
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 32 (12) , 1347-1351
- https://doi.org/10.1016/0038-1101(89)90238-4
Abstract
No abstract availableKeywords
This publication has 12 references indexed in Scilit:
- Diffusion effects in short-channel GaAs MESFETsSolid-State Electronics, 1989
- Monte Carlo modeling of electron transport in repeated overshoot structuresIEEE Transactions on Electron Devices, 1989
- Theory and applications of near ballistic transport in semiconductorsProceedings of the IEEE, 1988
- Simulation of submicrometer GaAs MESFET's using a full dynamic transport modelIEEE Transactions on Electron Devices, 1988
- Efficient and accurate use of the energy transport method in device simulationIEEE Transactions on Electron Devices, 1988
- Finite-difference numerical methods for solving the energy-momentum transport equations in two-valley semiconductorsJournal of Computational Physics, 1985
- Numerical methods for semiconductor device simulationIEEE Transactions on Electron Devices, 1983
- Collocation Software for Boundary-Value ODEsACM Transactions on Mathematical Software, 1981
- Velocity-field characteristics of GaAs with Γc6-L c6-X c6 conduction-band orderingJournal of Applied Physics, 1977
- Transport equations for electrons in two-valley semiconductorsIEEE Transactions on Electron Devices, 1970