Diffusion effects in short-channel GaAs MESFETs
- 31 March 1989
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 32 (3) , 191-198
- https://doi.org/10.1016/0038-1101(89)90091-9
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- Quasi-two-dimensional modeling of GaAs MESFET'sIEEE Transactions on Electron Devices, 1987
- The performance of submicrometer gate length GaAs MESFET'sIEEE Transactions on Electron Devices, 1983
- Effects of velocity overshoot on performance of GaAs devices, with design informationSolid-State Electronics, 1983
- Direct comparison of the electron-temperature model with the particle-mesh (Monte-Carlo) model for the GaAs MESFETIEEE Transactions on Electron Devices, 1982
- A temperature model for the GaAs MESFETIEEE Transactions on Electron Devices, 1981
- Diffusion effects and "Ballistic transport"IEEE Transactions on Electron Devices, 1981
- Importance of boundary conditions to conduction in short samplesIEEE Transactions on Electron Devices, 1981
- Ballistic transport in semiconductor at low temperatures for low-power high-speed logicIEEE Transactions on Electron Devices, 1979
- 250-Å linewidths with PMMA electron resistApplied Physics Letters, 1978
- Theory of negative-conductance amplification and of Gunn instabilities in "two-valley" semiconductorsIEEE Transactions on Electron Devices, 1966