Efficient and accurate use of the energy transport method in device simulation

This publication has 9 references indexed in Scilit:

• MOSFET substrate current model including energy transport
  IEEE Electron Device Letters, 1987
• VB-7 prediction of hot-electron-induced gate currents
  IEEE Transactions on Electron Devices, 1986
• An investigation of steady-state velocity overshoot in silicon
  Solid-State Electronics, 1985
• Hot-electron and hole-emission effects in short n-channel MOSFET's
  IEEE Transactions on Electron Devices, 1985
• The Monte Carlo method for the solution of charge transport in semiconductors with applications to covalent materials
  Reviews of Modern Physics, 1983
• Submicrometer MOSFET structure for minimizing hot-carrier generation
  IEEE Transactions on Electron Devices, 1982
• AN EFFICIENT TECHNIQUE FOR TWO‐DIMENSIONAL SIMULATION OF VELOCITY OVERSHOOT EFFECTS IN Si AND GaAs DEVICES
  COMPEL: The International Journal for Computation and Mathematics in Electrical and Electronic Engineering, 1982
• Introduction to Solid-State Theory
  Published by Springer Nature ,1978
• Transport equations for electrons in two-valley semiconductors
  IEEE Transactions on Electron Devices, 1970