Thermally stable rhenium Schottky contacts to n-GaN
- 31 August 1998
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 73 (9) , 1242-1244
- https://doi.org/10.1063/1.122140
Abstract
The barrier heights of Re Schottky contacts to n-GaN were investigated by current–voltage (I–V) and capacitance–voltage (C–V) measurements. Both techniques indicate that the barrier height increases upon annealing at 500 °C for 10 min. After this anneal, a barrier height of 0.82 eV and ideality factor of 1.1 are obtained by I–V measurements performed at 150 °C. The C–V measurements performed at room temperature reveal a barrier height of 1.06 eV. These barrier heights are stable upon further short term annealing at temperatures as high as 700 °C. The Re Schottky contacts were also stable upon prolonged annealing for 24 h at 300 °C. The Re/n-GaN Schottky diode was chosen for study because of its anticipated thermodynamic stability against metallurgical reactions.Keywords
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