Critical issues for the growth of high-quality (Al,Ga)N/GaN and GaN/(In,Ga)N heterostructures on SiC(0001) by molecular-beam epitaxy
- 14 December 1999
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 75 (25) , 4019-4021
- https://doi.org/10.1063/1.125524
Abstract
We identify and discuss the essential strategies for the growth of (Al,Ga)N/GaN and GaN/(In,Ga)N heterostructures on SiC(0001) by both plasma-assisted and reactive molecular-beam epitaxy. Substrate preparation, nucleation, and growth conditions are optimized for simultaneously satisfying the requirements of high structural, morphological, optical, and electrical quality. The results demonstrate that molecular-beam epitaxy is a competitive technique for the growth of group-III nitrides.Keywords
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