Radiation-Induced Recombination and Trapping Centers in Germanium. II. Annealing in Gamma-Irradiated, Antimony-, and Arsenic-Doped Material

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Abstract
An investigation has been made of the annealing properties of radiation-induced recombination centers in germanium. The annealing behavior of antimony-doped germanium is grossly different from that of arsenic-doped material. The experimental observations are explained on the following basis: The recombination level at 0.36 ev above the valence band belongs to the vacancy. In antimony-doped material the vacancy disappears by association with an antimony atom. This process does not occur in arsenic-doped material, and higher temperatures are required to produce annealing. It is thought that a trapping level, present only in arsenic-doped material, located 0.10 ev above the valence band might be due to an arsenic-interstitial pair.