Temperature-Variable Characteristics and Noise in Metal--Semiconductor Junctions
- 1 September 1986
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Microwave Theory and Techniques
- Vol. 34 (9) , 913-922
- https://doi.org/10.1109/tmtt.1986.1133471
Abstract
No abstract availableThis publication has 33 references indexed in Scilit:
- Noise Measurements and Noise Mechanisms in Microwave Mixer DiodesPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2005
- Hot-electron noise generation in gallium-arsenide Schottky-barrier diodesElectronics Letters, 1983
- Characteristics of Schottky diodes with microcluster interfaceApplied Physics Letters, 1983
- Barrier height and leakage reduction in n-GaAs–platinum group metal Schottky barriers upon exposure to hydrogenJournal of Vacuum Science & Technology B, 1983
- Near ballistic electron transport in GaAs devices at 77°KSolid-State Electronics, 1981
- Current/voltage characteristics of degenerated molybdenum and platinum Schottky diodesElectronics Letters, 1980
- Effect of GaAs or GaxAl1−xAs oxide composition on Schottky‐barrier behaviorJournal of Applied Physics, 1979
- Unified theory of high-frequency noise in Schottky barriersJournal of Applied Physics, 1973
- Noise behavior of GaAs field-effect transistors with short gate lengthsIEEE Transactions on Electron Devices, 1972
- Theory of low-frequency generation noise in junction-gate field-effect transistorsProceedings of the IEEE, 1964