Irreversible switching of conductivity states in ZnTe/Ge heterojunctions
- 31 October 1973
- journal article
- research article
- Published by Elsevier in Solid-State Electronics
- Vol. 16 (10) , 1213-IN14
- https://doi.org/10.1016/0038-1101(73)90151-2
Abstract
No abstract availableThis publication has 12 references indexed in Scilit:
- Switching and memory characteristics of ZnTe thin filmsSolid-State Electronics, 1972
- Epitaxial growth and structure of ZnTe evaporated on to Ge in vacuumJournal of Materials Science, 1972
- Electrical behaviour of p Ge- n ZnSe heterojunctionsElectronics Letters, 1972
- Switching and Memory Characteristics of ZnSe - Ge HeterojunctionsJournal of Applied Physics, 1971
- Memory Effects in ZnTe-InAs HeterojunctionsJapanese Journal of Applied Physics, 1971
- Conduction in thin dielectric filmsJournal of Physics D: Applied Physics, 1971
- SWITCHING AND MEMORY IN ZnSe–Ge HETEROJUNCTIONSApplied Physics Letters, 1970
- A study of defects in epitaxial films of ZnTe by transmission electron microscopyJournal of Materials Science, 1969
- The Growth and Electrical Characteristics of Epitaxial Layers of Zinc Selenide on p‐Type GermaniumPhysica Status Solidi (b), 1968
- Epitaxial films of ZnTe on ionic substratesBritish Journal of Applied Physics, 1966