Dopant profiling in silicon on sapphire using spreading resistance
- 1 March 1984
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 44 (5) , 542-544
- https://doi.org/10.1063/1.94805
Abstract
Results are presented of accurate dopant (boron and phosphorus) profiles in silicon on sapphire and comparable profiles in bulk silicon. These profiles have been determined by spreading resistance. It is shown that a well controlled spreading resistance facility has the required sensitivity, depth resolution, and dynamic range for profiling electrically active dopants in thin silicon on sapphire films.Keywords
This publication has 3 references indexed in Scilit:
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- Application of Multilayer Potential Distribution to Spreading Resistance Correction FactorsJournal of the Electrochemical Society, 1969
- A Spreading Resistance Technique for Resistivity Measurements on SiliconJournal of the Electrochemical Society, 1966