Reduction of linewidth enhancement factor in InGaAsP/InP modulation-doped strained multiple-quantum-well lasers

Publisher Website

25 August 2005

proceedings article
Published by Institute of Electrical and Electronics Engineers (IEEE)

p. 32-33
https://doi.org/10.1109/islc.1992.763558

Abstract

No abstract available

Keywords

This publication has 2 references indexed in Scilit:

Linewidth enhancement factor of 1.3 mu m InGaAsP/InP strained-layer multiple-quantum-well DFB lasers
IEEE Photonics Technology Letters, 1991
Linewidth enhancement factor in strained quantum well lasers
IEEE Photonics Technology Letters, 1989