Orientational dependence of damage in te + implanted germanium single crystals
- 1 January 1983
- journal article
- research article
- Published by Taylor & Francis in Radiation Effects
- Vol. 69 (3) , 191-198
- https://doi.org/10.1080/00337578308217823
Abstract
Germanium , and >111< single crystals implanted with 46 keV Te ions with doses between 1012 and 1015 ions cm−2 have been analyzed by TEM of surface replicas, RHEED, and MeV He+ channelling. The combination of these types of measurements reveals the effect of crystalline orientation on heavy ion damage in a germanium lattice. The degree of disorder in the bulk, resulting from low dose implantation is lowest at and >111< channelling and highest at channelling.Keywords
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