Charge-exchange neutral-atom filling of ion diodes: Its effect on diode performance and A-K shorting
- 1 April 1981
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 52 (4) , 3004-3011
- https://doi.org/10.1063/1.329045
Abstract
We present a model, supported by experimental evidence, showing how high‐density charge‐exchange neutral atoms (A‐K) gap. The buildup of the neutral atoms in the A‐K gap and their ionization can cause early A‐K shorting which limits high‐power and/or long‐pulse, ion‐diode operation. Ways to avoid the charge‐exchange phenomena are mentioned. The ability to produce large‐pulsed fluxes of energetic neutrals may have unique applications of its own. For example, high rep‐rate spark gaps could benefit from the reduced gas load of an injected short pulse of high‐density neutral atoms. Also discussed is the possibility of using an ion‐diode geometry to fill a spark‐gap cavity with neutrals and then initiate total volume breakdown by ion‐impact ionization, thereby avoiding inductive electron filaments.This publication has 5 references indexed in Scilit:
- Transient Magnetic Field Reversal with a Rotating Proton LayerPhysical Review Letters, 1980
- Focusing of Intense Ion Beams from Pinched-Beam DiodesPhysical Review Letters, 1978
- Electron Beam Generation in Plasma-Filled DiodesPhysical Review Letters, 1975
- Method of Generating Very Intense Positive-Ion BeamsPhysical Review Letters, 1975
- Advances in the efficient generation of intense pulsed proton beamsJournal of Applied Physics, 1975