Plasmon-phonon modes and clustering effects in Raman spectra of n-InxGa1-xAs†
- 1 September 1994
- journal article
- physical electronics
- Published by Taylor & Francis in International Journal of Electronics
- Vol. 77 (3) , 309-316
- https://doi.org/10.1080/00207219408926060
Abstract
Theoretical and experimental investigations on Raman scattering spectra of optical phonons and plasmon-phonon modes of undoped and Si-doped n-InxGa1-xAs (n ≈ 1015-1019, x = 0.05−0.3) are presented. It is shown that optical phonons of n-InxGa1-xAs for x = 0.1−0.3 have three mode behaviour and an additional band in the Raman spectra of this ternary alloy is associated with clusters having (GaAs)1(InAs)1 superlattice structure. The parameters of optical phonons and plasmons of n-InxGa1-xAs are measured.Keywords
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