Charge storage in CeO2/Si/CeO2/Si(111) structures by electrostatic force microscopy
- 30 August 1999
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 75 (9) , 1326-1328
- https://doi.org/10.1063/1.124682
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- Charge storage in Co nanoclusters embedded in SiO2 by scanning force microscopyApplied Physics Letters, 1999
- Epitaxial silicon grown on CeO2/Si(111) structure by molecular beam epitaxyJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1998
- A high-resolution scanning Kelvin probe microscope for contact potential measurements on the 100 nm scaleReview of Scientific Instruments, 1997
- Surface structure of single-crystal CeO2 layers grown on SiThin Solid Films, 1996
- Reaction and regrowth control of CeO2 on Si(111) surface for the silicon-on-insulator structureApplied Physics Letters, 1994
- Epitaxial Growth of CeO2 Films on Si(111) by SputteringJapanese Journal of Applied Physics, 1994
- a-axis oriented YBa2Cu3O7−x thin films on Si with CeO2 buffer layersApplied Physics Letters, 1991
- Kelvin probe force microscopyApplied Physics Letters, 1991
- Epitaxial growth of CeO2 layers on siliconApplied Physics Letters, 1990