Epitaxial silicon grown on CeO2/Si(111) structure by molecular beam epitaxy
- 1 September 1998
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
- Vol. 16 (5) , 2686-2689
- https://doi.org/10.1116/1.590257
Abstract
No abstract availableThis publication has 10 references indexed in Scilit:
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