Thermal Decomposition of CeO 2 in Ultra High Vacuum as a Cause of Polycrystalline Growth of Si Films on Epitaxial CeO 2/Si

Publisher Website
Google Scholar
Abstract
Epitaxially grown CeO2(111)/Si(111) samples are heated up to 800°C in an ultra high vacuum environment, and it is verified that CeO2 decomposes above 690°C and the CeO2 surface becomes amorphous by means of residual gas analysis using quadrapole mass spectrometry, Rutherford backscattering in conjunction with a channeling technique, and in situ reflection high energy electron diffraction observation. The inherent difficulty of growing single crystal Si on CeO2 is discussed.