RBS/Channeling Study of the Crystallographic Correlation for Epitaxial CeO2 on Si
- 1 April 1993
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 32 (4B) , L620
- https://doi.org/10.1143/jjap.32.l620
Abstract
Epitaxially grown CeO2 layers on (100) Si substrates are analyzed using the Rutherford backscattering spectrometry combined with th e channeling technique. By construction of stereographic projections for CeO2 layers and Si substrates from channeling dip patterns, the correlations between overgrown layers and substrates are clearly revealed: CeO2 layers on (100) Si substrates have the (110) orientation. It has also been revealed that CeO2 has a double domain structure: [001] CeO2 ∥ [011̄] Si and [11̄0] CeO2 ∥ [011̄] Si, whereas planes of (110) in CeO2 and (100) in Si are parallel in both configurations. It is reported that in this system the (110) epitaxial orientation is not exactly parallel to the (100) orientations in Si.Keywords
This publication has 6 references indexed in Scilit:
- Growth of (110)-oriented CeO2 layers on (100) silicon substratesApplied Physics Letters, 1991
- a-axis oriented YBa2Cu3O7−x thin films on Si with CeO2 buffer layersApplied Physics Letters, 1991
- Low-temperature epitaxial growth of cerium dioxide layers on (111) silicon substratesJournal of Applied Physics, 1991
- Heteroepitaxial Growth of CeO2(001) Films on Si(001) Substrates by Pulsed Laser Deposition in Ultrahigh VacuumJapanese Journal of Applied Physics, 1991
- In Situ RHEED Observation of CeO2 Film Growth on Si by Laser Ablation Deposition in Ultrahigh-VacuumJapanese Journal of Applied Physics, 1990
- Epitaxial growth of CeO2 layers on siliconApplied Physics Letters, 1990