γ-LiAlO2 single crystal: a novel substrate for GaN epitaxy
- 1 September 1998
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 193 (1-2) , 127-132
- https://doi.org/10.1016/s0022-0248(98)00469-2
Abstract
No abstract availableKeywords
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