Improvement of electromigration resistance of layered aluminum conductors
- 4 December 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
The electromigration of layered fine Al conductors (AlSi/TiN, AlSi/W, over/under) is discussed. The study indicates that (1) layering with refractory metals degrades the migration immunity of the Al layer, (2) refractory metal layers tend to suppress Al grain growth and crystal orientation, (3) by improving the film properties of refractory metals and optimizing the layer structure to minimize this grain growth suppression, conductor lifetimes can be lengthened by one or more orders of magnitude over those of conventionally layered or monolayer conductors.Keywords
This publication has 3 references indexed in Scilit:
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- Effects of annealing temperature on electromigration performance of multilayer metallization systemsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- ber den Mechanismus der Stahlh rtungThe European Physical Journal A, 1930