Study of Deposition Process in Modulated RF Silane Plasma
- 1 July 1994
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 33 (7S) , 4389-4394
- https://doi.org/10.1143/jjap.33.4389
Abstract
The influences of plasma parameters on the deposition of a-Si:H film and particle growth have been studied with silane discharge using amplitude-modulated RF methods. Plasma parameters have been measured with the Langmuir probe system and optical emission spectrometer. Behaviors and generation processes of particles have been observed by the laser scattering method. The deposited thin film has been characterized by various techniques such as Fourier-transform infrared (FT-IR) spectrometry, ESR and the constant photocurrent method (CPM). High deposition rate with low particle density as well as high film quality has been realized for a-Si:H film by amplitude-modulated RF methods.Keywords
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