Field-emission SEM imaging of compositional and doping layer semiconductor superlattices
- 1 April 1995
- journal article
- Published by Elsevier in Ultramicroscopy
- Vol. 58 (1) , 104-113
- https://doi.org/10.1016/0304-3991(94)00183-n
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- Atomic and electronic Z-contrast effects in high-resolution imagingUltramicroscopy, 1994
- Scanning Electron Microscope Observations of As+-Ion-Implanted RegionJapanese Journal of Applied Physics, 1993
- Resolution of superlattice structures with backscattered electrons in a scanning electron microscopeUltramicroscopy, 1993
- Cross-sectional imaging of doped layers in epitaxial gallium arsenide films by scanning tunneling microscopyJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1993
- Plastic deformation under microindentations in GaAs/AlAs superlatticesPhilosophical Magazine Letters, 1993
- High-resolution scanning electron microscopyUltramicroscopy, 1992
- On the electron microscope contrast of doped semiconductor layersPhilosophical Magazine A, 1991
- Tunneling spectroscopy of the GaAs(110) surfaceJournal of Vacuum Science & Technology B, 1987
- Chemisorption-induced defects at interfaces on compound semiconductorsSurface Science, 1983
- Scanning electron microscopy and cathodoluminescence of ZnSex Te1 − x p-n junctionsJournal of Applied Physics, 1972