Epitaxial Growth of Silicon and Germanium (I)
- 1 January 1966
- journal article
- research article
- Published by Wiley in Physica Status Solidi (b)
- Vol. 15 (1) , 3-56
- https://doi.org/10.1002/pssb.19660150102
Abstract
No abstract availableKeywords
This publication has 64 references indexed in Scilit:
- Interactions of gas molecules with an ideal crystal surfaceAIAA Journal, 1964
- Temperature Dependence of Ejection Patterns in Ge SputteringJournal of Applied Physics, 1963
- Dendritic Growth of Germanium CrystalsPhysical Review B, 1959
- Principles and Applications of the Iodide ProcessJournal of the Electrochemical Society, 1959
- New Collision Theory of Cathode Sputtering of Metals at Low Ion EnergiesPhysical Review B, 1957
- The preparation of germaneJournal of Inorganic and Nuclear Chemistry, 1957
- Sputtering of Metal Single Crystals by Ion BombardmentJournal of Applied Physics, 1955
- Momentum Transfer in Sputtering by Ion BombardmentJournal of Applied Physics, 1954
- The growth of crystals and the equilibrium structure of their surfacesPhilosophical Transactions of the Royal Society of London. Series A, Mathematical and Physical Sciences, 1951
- The Removal of Thorium from the Surface of a Thoriated Tungsten Filament by Positive Ion BombardmentPhysical Review B, 1923