Temperature Dependence of Ejection Patterns in Ge Sputtering
- 1 December 1963
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 34 (12) , 3492-3495
- https://doi.org/10.1063/1.1729245
Abstract
Atom ejection patterns from the Ge (100) and (110) surfaces have been studied for 100–800 eV Ne+, Ar+, Kr+, and Xe+ ion bombardment as a function of target temperature in the range 0°–350°C. For ion energies below a critical value dependent on the bombarding ion, atom ejection patterns are always observed; while for higher bombarding energies the patterns appear only when the target temperature exceeds a certain value. From these data an activation energy of 1.3 eV for diffusion of defects was obtained. The experimental results indicate that very little damage to the lattice results from ion bombardment when the ion energy stays below a critical value (Ar, Ne: ∼200 eV; Kr, Xe: ∼400 eV). At higher ion energy the damage becomes more severe and higher target temperatures are required for annealing the damage between subsequent ion collisions.This publication has 8 references indexed in Scilit:
- Structures of Clean Surfaces of Germanium and Silicon. IJournal of Applied Physics, 1963
- Atom Ejection in Low Energy Sputtering of Single Crystals of bcc MetalsJournal of Applied Physics, 1963
- Sputtering Experiments with 1- to 5-keV Ar+ IonsJournal of Applied Physics, 1963
- Sputtering of Dielectrics by High-Frequency FieldsJournal of Applied Physics, 1962
- Atom Ejection in Low Energy Sputtering of Single Crystals of fcc Metals and of Ge and SiJournal of Applied Physics, 1962
- Effects of Monolayer Adsorption and Bombardment Damage on Auger Electron Ejection from GermaniumJournal of Applied Physics, 1961
- Atom Ejection Patterns in Single-Crystal SputteringJournal of Applied Physics, 1960
- Application of the Ion Bombardment Cleaning Method to Titanium, Germanium, Silicon, and Nickel as Determined by Low-Energy Electron DiffractionJournal of Applied Physics, 1958