Degradation mechanism of (Al · Ga)As double-heterostructure laser diodes
- 1 January 1974
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 24 (1) , 18-19
- https://doi.org/10.1063/1.1654991
Abstract
This paper reports new observations in degraded (Al · Ga)As double‐heterostructure (DH) laser diodes and proposes a mechanism of short‐term ([inverted lazy s] 100 h) degradation characteristic to DH structures. Degradation is seen localized as ``dark lines'' of certain crystalline orientations in electroluminescent patterns, as well as junction current patterns using an SEM. X‐ray measurement showed internal strain due to heteromismatch. It is suggested that the internal stress accelerates development of the dark lines, which is likely to be a crystalline defect caused by thermal stresses.Keywords
This publication has 3 references indexed in Scilit:
- Experimental tests of proposed mechanisms for gradual degradation of GaAs double-heterostructure injection lasersIEEE Journal of Quantum Electronics, 1972
- Thermal Expansion of AlAsJournal of Applied Physics, 1970
- Optical observation of mismatch dislocations in GaAs luminescent diodesSolid State Communications, 1969