Shallow states of donor impurity at the surface of isotropic semiconductors
- 20 June 1985
- journal article
- Published by IOP Publishing in Journal of Physics C: Solid State Physics
- Vol. 18 (17) , 3399-3406
- https://doi.org/10.1088/0022-3719/18/17/016
Abstract
The perturbative variational method is applied to the surface impurity states in semiconductors. It is found that this method can be used to calculate any state, no matter how high it may be, and the surface impurity levels are obtained from those of the hydrogen atom simply by a redefinition of the charge. As a concrete example of the application numerical results are obtained for surface impurity states in GaAs using this method.Keywords
This publication has 17 references indexed in Scilit:
- Effective masses for impurity states in anisotropic crystalsJournal of Physics C: Solid State Physics, 1984
- Quantum diffusion in nonideal crystalsSoviet Physics Uspekhi, 1983
- A novel perturbative-variational approach and its application to the impurity states in anisotropic crystals-A commentJournal of Physics C: Solid State Physics, 1983
- A novel perturbative-variational approach and its application to the impurity states in anisotropic crystalsJournal of Physics C: Solid State Physics, 1982
- Theory of bound states associated with-type inversion layers on siliconPhysical Review B, 1978
- The electronic structure of impurities and other point defects in semiconductorsReviews of Modern Physics, 1978
- Electronic states of impurities located at or near semiconductor–insulator interfacesJournal of Vacuum Science and Technology, 1978
- Binding energies and wave functions of wannier excitons in uniaxial crystals — a modified perturbation approach. I. theoryPhysica Status Solidi (b), 1975
- Theory of shallow donor impurity near-surface states in Si and GeSurface Science, 1973
- Nodal Hydrogenic Wave Functions of Donors on Semiconductor SurfacesPhysical Review B, 1965