Trade-Offs For RAD-Hard Soi Structures
- 1 January 1987
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
Total dose, dose rate, transient, single event upset and neutron radiation effects for dielectrically isolated MOS devices on S01(silicon-on-insulator) substrates are discussed. For large-scale, high-speed circuits, material, layout and process characteristics optimized for high circuit yield and reliability may conflict with improvements required to extend radiation thresholds. Some radiation hardening techniques applicable to silicon-on-insulator high speed thin film MOS devices are presented.Keywords
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